3 distinctions for studies led by ISAE-SUPAERO in the field of radiation impacts on microelectronics

2019 was a very proficient year for the team working on radiation impacts on microelectronics:

First, the IEEE NSREC Meritorious Conference Paper Award has been delivered to Vincent Goiffon and al. This prize is the result of the collaboration between CNES, CEA, and ISAE-SUPAERO (DISC and DEOS). The experience was initiated through an innovation and research project of the engineering curriculum (with Théo DELADERRIERE) and a Master in Aerospace engineering project (Teddy Bilba).

The paper : "Radiation-Induced Variable Retention Time in Dynamic Random Access Memories", was written by V. Goiffon in collaboration with T. Bilba, T. Deladerriere, G. Beaugendre, A. Le-Roch, A. Dion, C. Virmontois, J.M. Belloir, M. Gaillardin, A. Jay and P. Paillet.

Secondly, the double prize IEEE RADECS Best student Paper Award & Best Paper Award have been delivered to Alexandre Le Roch et al. These prizes are the result of the collaboration between CNES, CEA, Fusion for Energy, and ISAE-SUPAERO.

The paper : “Phosphorus Versus Arsenic: Role of the Photodiode Doping Implant in CMOS Image Sensor Dark Current and Random Telegraph Signal,”, was written by A. Le Roch, C. Virmontois, P. Paillet, J.-M. Belloir, S. Rizzolo, O. Marcelot, H. Dewitte, M. Van Uffelen, L. Mont Casellas, P. Magnan, and V. Goiffon.

Both papers were published in the January 2020 issue of the IEEE Transactions on Nuclear Science.